cystech electronics corp. spec. no. : c824m3 issued date : 2007.05.04 revised date : 2014.02.24 page no. : 1/6 BTB1198M3 cystek product specification general purpose pnp epitaxial planar transistor BTB1198M3 features ? high breakdown voltage, bv ceo -100v ? large continuous collector current capability ? low collector saturation voltage ? complementary to btd5213m3 ? pb-free lead plating and halogen-free package symbol outline ordering information device package shipping BTB1198M3-0-t2-g sot-89 (pb-free lead plating and halogen-free package) 1000 pcs / tape & reel sot-89 BTB1198M3 b base c collector e emitter b c e environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t2 :1000 pcs/tape & reel, 7? reel product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c824m3 issued date : 2007.05.04 revised date : 2014.02.24 page no. : 2/6 BTB1198M3 cystek product specification absolute maximum ratings (ta=25 c) parameter symbol limits unit collector-base voltage v cbo -120 collector-emitter voltage v ceo -100 emitter-base voltage v ebo -5 v collector current(dc) i c -1 collector current(pulse) i cp -2 a base current(dc) i b -200 ma 0.6 1 (note 1) power dissipation pd 2 (note 2) w 208 83.3 (note 1) thermal resistance, junction to ambient r ja 59.5 (note 2) c/w operating junction temperature range tj -65~+150 c storage temperature range tstg -65~+150 c note : 1. when mounted on fr-4 pcb with area measuring 10101 mm 2 . when mounted on ceramic w ith area measuring 40401 mm characteristics (ta=25 c) symbol min. typ. max. unit test conditions bv cbo -120 - - v i c =-100 a bv ceo -100 - - v i c =-10ma bv ebo -5 - - v i e =-100 a i cbo - - -100 na v cb =-100v i ebo - - -20 na v eb =-4v *v ce(sat) - -0.1 -0.2 v i c =-250ma, i b =-25ma *v ce(sat) - -0.16 -0.3 v i c =-500ma, i b =-50ma *v ce(sat) - -0.3 -0.5 v i c =-1a, i b =-100ma *v be(sat) - -0.89 -1.1 v i c =-500ma, i b =-50ma *v be(on) - - -1 v v ce =-5v, i c =-1ma *h fe 1 160 - - - v ce =-2v, i c =-5ma *h fe 2 180 - 390 - v ce =-2v, i c =-150ma *h fe 3 40 - - - v ce =-2v, i c =-500ma f t 150 200 - mhz v ce =-10v, i c =-50ma, f=100mhz cob - 11 15 pf v cb =-10v, i e =0a,f=1mhz *pulse test: pulse width 380 s, duty cycle 2%
cystech electronics corp. spec. no. : c824m3 issued date : 2007.05.04 revised date : 2014.02.24 page no. : 3/6 BTB1198M3 cystek product specification typical characteristics current gain vs collector current 10 100 1000 1 10 100 1000 collector current---ic(ma) current gain---hfe vce=1v vce=2v vce=3v saturation voltage vs collector current 10 100 1000 10000 1 10 100 1000 collector current---ic(ma) saturation voltage---(mv) vcesat ic=100ib ic=50ib ic=20ib ic=10ib saturation voltage vs collector current 100 1000 1 10 100 1000 collector current---ic(ma) saturation voltage---(mv) vbesat@ic=10ib on voltage vs collector current 100 1000 1 10 100 1000 collector current---ic(ma) on voltage---(mv) vbeon@vce=3v power derating curves 0 0.5 1 1.5 2 2.5 0 50 100 150 200 ambient temperature---ta() power dissipation---pd(w) see note 2 on page 1 see note 1 on page 1 transition frequency vs collector current 10 100 1000 1 10 100 1000 collector current---ic(ma) transition frequency---ft(mhz)
cystech electronics corp. spec. no. : c824m3 issued date : 2007.05.04 revised date : 2014.02.24 page no. : 4/6 BTB1198M3 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c824m3 issued date : 2007.05.04 revised date : 2014.02.24 page no. : 5/6 BTB1198M3 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 5 +1/-1 seconds 260 +0/-5 c recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of the package, measured on the package body surface.
cystech electronics corp. spec. no. : c824m3 issued date : 2007.05.04 revised date : 2014.02.24 page no. : 6/6 BTB1198M3 cystek product specification sot-89 dimension inches millimeters inches millimeters marking: dim min. max. min. max. dim min. max. min. max. a 0.1732 0.1811 4.40 4.60 f 0.0591 typ 1.50 typ b 0.1551 0.1673 3.94 4.25 g 0.1181 typ 3.00 typ c 0.0610 ref 1.55 ref h 0.0551 0.0630 1.40 1.60 d 0.0906 0.1024 2.30 2.60 i 0.0138 0.0173 0.35 0.44 e 0.0126 0.0205 0.32 0.52 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing spec ification or packing method, please cont act your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitab le for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance . ak e f g c b a 3 2 1 device code h i d date code style: pin 1. base 2. collector 3. emitter 3-lead sot-89 plastic surface mounted package cystek package code: m3
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